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532nmLIBS激光器

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532nm LIBS(2~20mJ0)激光器

NBET-532-Q/2~20mJ

HIGH ENERGY DIODE PUMPED ALL-SOLID-STATE Q-SWITCHEDLASER

High energy diode pumped all solid state Q-switched laser at 532nm has the features of high single pulse energy,short pulse duration,and high peak power,which is widely used in PIV, LIF, LIBS, ICP-MS scientific research, laser processing, military, and so on.

主要应用

高能二极管泵浦,全固态,Q-SWITCHEDLASER,高能二极管泵浦固体,q开关激光在532 nm的特性

单脉冲能量高、短脉冲,时间和峰值功率高,广泛用于PIV、生活,库,icp,科学研究、激光加工、军事、等等。

产品特点

用于透明固体物质LIBS光谱检测的激光器。具有窄脉宽、高单脉冲能量等特点。窄脉宽、高能量,可以有效击穿各类气体,适用于气体及液体样品LIBS光谱检测

技术参数

avelength (nm)                          

 532±1

Operating mode                          

 Electro-optics Q-switched

Single pulse energy (mJ)             

2      5     10    15    20

Rep. rate (Hz)                             

1000    1~100 (adjustable)

Energy stability


Beam divergence, full angle (mrad) 

~2

Beam diameter (mm)                   

 ~1.5 ~2 ~2.5 ~3 ~4

Warm-up time (minutes)

<15

Beam height from base plate (mm)

55

Cooled method    

Water Cooled

Operating temperature (℃)

15~35

Power supply (220/110VAC)

PSU-NBET-Q-II(3U) @1KHz , PSU-NBET-Q-I @100Hz

Expected lifetime (pulses)

109

Warranty

1 year

Available options Other repetition rates:100~1000Hz; Jitter:~1ns(Sdev); Accessories

选型指南

NBET-532

532nm半导体激光器,数显可调。

NBET-S-1064

1064nm半导体激光器,数显可调。

NBET-A-1064/

1064nm半导体激光器,数显可调。

NBET-L-1064

1064nm半导体激光器,数显可调。


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