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532nm LIBS(2~20mJ0)激光器
NBET-532-Q/2~20mJ
HIGH ENERGY DIODE PUMPED ALL-SOLID-STATE Q-SWITCHEDLASER
High energy diode pumped all solid state Q-switched laser at 532nm has the features of high single pulse energy,short pulse duration,and high peak power,which is widely used in PIV, LIF, LIBS, ICP-MS scientific research, laser processing, military, and so on.
主要应用
高能二极管泵浦,全固态,Q-SWITCHEDLASER,高能二极管泵浦固体,q开关激光在532 nm的特性
单脉冲能量高、短脉冲,时间和峰值功率高,广泛用于PIV、生活,库,icp,科学研究、激光加工、军事、等等。
产品特点
用于透明固体物质LIBS光谱检测的激光器。具有窄脉宽、高单脉冲能量等特点。窄脉宽、高能量,可以有效击穿各类气体,适用于气体及液体样品LIBS光谱检测
技术参数
| avelength (nm) | 532±1 | 
| Operating mode | Electro-optics Q-switched | 
| Single pulse energy (mJ) | 2 5 10 15 20 | 
| Rep. rate (Hz) | 1000 1~100 (adjustable) | 
| Energy stability | |
| Beam divergence, full angle (mrad) | ~2 | 
| Beam diameter (mm) | ~1.5 ~2 ~2.5 ~3 ~4 | 
| Warm-up time (minutes) | <15 | 
| Beam height from base plate (mm) | 55 | 
| Cooled method | Water Cooled | 
| Operating temperature (℃) | 15~35 | 
| Power supply (220/110VAC) | PSU-NBET-Q-II(3U) @1KHz , PSU-NBET-Q-I @100Hz | 
| Expected lifetime (pulses) | 109 | 
| Warranty | 1 year | 
| Available options Other repetition rates:100~1000Hz; Jitter:~1ns(Sdev); Accessories | |
选型指南
| NBET-532 | 532nm半导体激光器,数显可调。 | 
| NBET-S-1064 | 1064nm半导体激光器,数显可调。 | 
| NBET-A-1064/ | 1064nm半导体激光器,数显可调。 | 
| NBET-L-1064 | 1064nm半导体激光器,数显可调。 | 


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